Spin relaxation in wurtzite nanowires

Recombination dynamics in wurtzite InP nanowires

S. Crankshaw,1 S. Reitzenstein,3 L. C. Chuang,2 M. Moewe,2 S. Münch,3 C. Böckler,3 A. Forchel,3 and C. Chang-Hasnain1,2 1Applied Science and Technology, University of California at Berkeley, Berkeley, California 94720, USA 2Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, USA 3Technische Physik, Physikalisches Institut...

Direct Band Gap Wurtzite Gallium Phosphide Nanowires

The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexago...

Direct detection of spontaneous polarization in wurtzite GaAs nanowires

Phase Transformation in Radially Merged Wurtzite GaAs Nanowires

III-V Nanowires (NWs) grown with metal-organic chemical vapor deposition commonly show a polytypic crystal structure, allowing growth of structures not found in the bulk counterpart. In this paper we studied the radial overgrowth of pure wurtzite (WZ) GaAs nanowires and characterized the samples with high resolution X-ray diffraction (XRD) to reveal the crystal structure of the grown material. ...

Carrier thermalization dynamics in single zincblende and wurtzite InP Nanowires.

Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measu...